Water cleavage into H2 and O2 using photocatalysts withsolar irradiation is a promising technique for producing clean energy withoutpollution or by products.1-5 A largeproportion of metal oxide photocatalysts can be activated only by UV light dueto large band gap energy.6-18 Manyreports focus on developing visible-light active photocatalysts, with d10 electronicconfigurations involving Ga3+, In3+, Ge4+, Se4+, and Sb5+ ions.19-30 The d10conduction bands of semiconducting materials are formed by hybridized sporbitals with large band dispersion, indicative of high electron mobility and hence high photocatalytic performances.22,23 Group III nitrides with wurtzitestructures have been extensively studied, due to their superioroptical and semiconducting properties.31-40 Amongthese nitrides, GaN is a blue-light emitting semiconductor, and its conductionand valence band levels are suitable for generating H2 and O2 gases fromphotocatalytic water splitting. Additionally, GaN has excellent chemicalstability in both acidic and basic solutions,which may enable continuous H2 andO2 productions without catalytic degradation.19-23 However,GaN has a large band gap of ca. 3.4 eV and is thereby insensitive to visiblelight
irradiation.Modification of GaN to narrow the band gap is a possibleroute for synthesizing water-splitting photocatalysts.
我需要专业一点的,这里很多词都没有比较符合的翻译