你这问题给的信息够多。找到了。 是日本东芝 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TPC6011 Notebook PC Applications Portable Equipment Applications • Low drain-source ON-resistance: R DS (ON) = 16 mΩ (typ.) ( V GS = 10V) • Low leakage current: I DSS = 10 μA (max) (V DS = 30 V) • Enhancement mode: V th = 1.3 to 2.5 V (V DS = 10 V, I D = 1 mA) 具体找相应文档吧。