谁给我写篇毕业论文。我给他200分。绝不骗人。急求啊。我邮箱[email protected]

Question

3000字，以下是题目，十个，随便选一个。（1小城镇建设中土地合理利用的主要途径2旧城改造3重视小城镇人居环境的建设4抓好小城镇建设 促经济社会发展5小城镇节水型社会建设对策与措施探讨6循环经济与甘肃小城镇建设——以甘肃某地区为例7小城镇建设中土地合理利用的主要途径8正确认识小城镇规划建设中的问题9统筹城乡发展与农村旅游小城镇建设10我国农村小城镇建设发展现状及其对策。。。。。。）（毕业论文字数不少于3000字。题目采用黑体二号居中，题目下空一行写摘要，摘要（包括关键词）用小四号楷体、正文字体为小四号宋体，字间距设置为标准字间距，行间距设置为固定值20磅。参考文献用宋体5号。正文中的一级标题用四号黑体，二级以下标题用小四号黑体，毕业论文的全部标题层次应有条不紊，整齐清晰。各级标题编号方法：标题编号应采用分级阿拉伯数字编号方法，第一级为“1”、“2”、“3”等，第二级为“1.1”、“1.2”、“1.3”等，第三级为“1.1.1”、“1.1.2”、“1.1.3”等，第四级及以下标题编号为 “⑴”、“⑵”、“⑶” …等。）

Answer 1

go athena

#
line x loc=0.0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.6 spac=0.01
#
line y loc=0.0 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
#
init orientation=100 c.phos=1e14 space.mul=2

#pwell formation including masking off of the nwell
#
diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
#
etch oxide thick=0.02
#
#P-well Implant
#
implant boron dose=8e12 energy=100 pears

#
diffus temp=950 time=100 weto2 hcl=3
#
#N-well implant not shown -
#
# welldrive starts here
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
#
diffus time=220 temp=1200 nitro press=1
#
diffus time=90 temp=1200 t.rate=-4.444 nitro press=1
#
etch oxide all
#
#sacrificial "cleaning" oxide
diffus time=20 temp=1000 dryo2 press=1 hcl=3
#
etch oxide all
#
#gate oxide grown here:-
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
#
# Extract a design parameter
extract name="gateox" thickness oxide mat.occno=1 x.val=0.05

#
#vt adjust implant
implant boron dose=9.5e11 energy=10 pearson

#
depo poly thick=0.2 divi=10
#
#from now on the situation is 2-D
#
etch poly left p1.x=0.35
#
method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
#
implant phosphor dose=3.0e13 energy=20 pearson
#
depo oxide thick=0.120 divisions=8
#
etch oxide dry thick=0.120
#
implant arsenic dose=5.0e15 energy=50 pearson
#
method fermi compress
diffuse time=1 temp=900 nitro press=1.0
#

# pattern s/d contact metal
etch oxide left p1.x=0.2
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18

# Extract design parameters

# extract final S/D Xj
extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1

# extract the N++ regions sheet resistance
extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1

# extract the sheet rho under the spacer, of the LDD region
extract name="ldd sheet rho" sheet.res material="Silicon" \
mat.occno=1 x.val=0.3 region.occno=1

# extract the surface conc under the channel.
extract name="chan surf conc" surf.conc impurity="Net Doping" \
material="Silicon" mat.occno=1 x.val=0.45

# extract a curve of conductance versus bias.
extract start material="Polysilicon" mat.occno=1 \
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name="sheet cond v bias" \
curve(bias,1dn.conduct material="Silicon" mat.occno=1 region.occno=1)\
outfile="extract.dat"

# extract the long chan Vt
extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49

structure mirror right

electrode name=gate x=0.5 y=0.1
electrode name=source x=0.1
electrode name=drain x=1.1
electrode name=substrate backside

structure outfile=mos1ex01_0.str

# plot the structure
tonyplot mos1ex01_0.str -set mos1ex01_0.set

############# Vt Test : Returns Vt, Beta and Theta ################
go atlas

# set material models
models cvt srh print

contact name=gate n.poly
interface qf=3e10

method newton
solve init

# Bias the drain
solve vdrain=0.1

# Ramp the gate
log outf=mos1ex01_1.log master
solve vgate=0 vstep=0.25 vfinal=3.0 name=gate
save outf=mos1ex01_1.str

# plot results
tonyplot mos1ex01_1.log -set mos1ex01_1_log.set

# extract device parameters
extract name="nvt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
- abs(ave(v."drain"))/2.0)
extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
* (1.0/abs(ave(v."drain")))
extract name="ntheta" ((max(abs(v."drain")) * $"nbeta")/max(abs(i."drain"))) \
- (1.0 / (max(abs(v."gate")) - ($"nvt")))

quit